abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v drm = 4500 v i tgqm = 600 a i tsm = 310 3 a v t0 = 1.9 v r t = 3.5 m w v dclink = 2800 v asymmetric gate turn-off thyristor 5sga 06d4502 preliminary doc. no. 5sya1236-00 jun. 04 patented free-floating silicon technology low on-state and switching losses central gate electrode industry standard housing cosmic radiation withstand rating blocking maximum rated values 1) parameter symbol conditions min typ max unit repetitive peak off-state voltage v drm v gr 3 2 v 4500 v repetitive peak reverse voltage v rrm 17 v permanent dc voltage for 100 fit failure rate v dclink ambient cosmic radiation at sea level in open air. 2800 v characteristic values parameter symbol conditions min typ max unit repetitive peak off-state current i drm v d = v drm , v gr 3 2 v 20 ma repetitive peak reverse current i rrm v r = v rrm , r gk = w 50 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 10 11 12 kn characteristic values parameter symbol conditions min typ max unit pole-piece diameter d p 0.1 mm 34 mm housing thickness h 26 mm weight m 0.25 kg surface creepage distance d s anode to gate 30 mm air strike distance d a anode to gate 20.5 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sga 06d4502 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1236-00 jun. 04 page 2 of 5 gto data on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i t(av)m half sine wave, t c = 85 c 210 a max. rms on-state current i t(rms) 330 a max. peak non-repetitive surge current i tsm 3.110 3 a limiting load integral i 2 t t p = 8.3 ms, t vj = 125c, sine wave after surge: v d = v r = 0 v 4010 3 a 2 s max. peak non-repetitive surge current i tsm 310 3 a limiting load integral i 2 t t p = 10 ms, t vj = 125c, sine wave after surge: v d = v r = 0 v 4510 3 a 2 s max. peak non-repetitive surge current i tsm 610 3 a limiting load integral i 2 t t p = 1 ms, t vj = 125c, sine wave after surge: v d = v r = 0 v 1810 3 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 600 a, t vj = 125c 4 v threshold voltage v (t0) 1.9 v slope resistance r t t vj = 125c i t = 200...600 a 3.5 m w holding current i h t vj = 25c 20 a turn-on switching maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di t /dt cr f = 200 hz 400 a/s critical rate of rise of on- state current di t /dt cr t vj = 125c, i t = 600 a, i gm = 20 a, di g /dt = 20 a/s f = 1 hz 600 a/s min. on-time t on 80 s characteristic values parameter symbol conditions min typ max unit turn-on delay time t d 1.5 s rise time t r 3 s turn-on energy per pulse e on v d = 0.5 v drm , t vj = 125 c i t = 600 a, di/dt = 200 a/s, i gm = 20 a, di g /dt = 20 a/s, c s = 1 f, r s = 10 w 0.8 j turn-off switching maximum rated values 1) parameter symbol conditions min typ max unit max. controllable turn-off current spike voltage i tgqm v dsp v dm v drm , v d = 0.5 v drm di gq /dt = 20 a/s, c s = 1 f, l s 0.15 h, rcd snubber 600 650 a v min. off-time t off 80 s characteristic values parameter symbol conditions min typ max unit storage time t s 15 s fall time t f 5 s turn-on energy per pulse e off 1.9 j peak turn-off gate current i gqm v d = 0.5 v drm , t vj = 125 c v dm v drm , di gq /dt = 20 a/s, i tgq = i tgqm , r s = 10 w , c s = 1 f, l s = 0.15 h rcd snubber 300 a
5sga 06d4502 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1236-00 jun. 04 page 3 of 5 gate maximum rated values 1) parameter symbol conditions min typ max unit repetitive peak reverse voltage v grm 17 v repetitive peak reverse current i grm v gr = v grm 20 ma characteristic values parameter symbol conditions min typ max unit gate trigger voltage v gt 1 v gate trigger current i gt t vj = 25c, v d = 24 v, r a = 0.1 w 2 a thermal maximum rated values 1) parameter symbol conditions min typ max unit junction operating temperature t vj 0 125 c storage temperature range t stg 0 125 c characteristic values parameter symbol conditions min typ max unit r th(jc) double side cooled 50 k/kw r th(jc)a anode side cooled 85 k/kw thermal resistance junction to case r th(jc)c cathode side cooled 122 k/kw r th(ch) single side cooled 16 k/kw thermal resistance case to heatsink (double side cooled) r th(ch) double side cooled 8 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i thjc i ? = t i 1 2 3 4 r i (k/kw) 15.000 5.200 7.500 0.100 t i (s) 0.4610 0.0950 0.0120 0.0010 fig. 1 transient thermal impedance, junction to case.
5sga 06d4502 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1236-00 jun. 04 page 4 of 5 fig. 2 general current and voltage waveforms with gto-specific symbols.
5sga 06d4502 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1236-00 jun. 04 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 3 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. reverse avalanche capability in operation with an antiparallel freewheeling diode, the gto reverse voltage v r may exceed the rate value v rrm due to stray inductance and diode turn-on voltage spike at high di/dt. the gto is then driven into reverse avalanche. this condition is not dangerous for the gto provided avalanche time and current are below 10 s and 1000 a respectively. however, gate voltage must remain negative during this time . recommendation : v gr = 10?15 v.
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